Physical origin of trench formation in Ge/Si(100) islands

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 203-205

  Sonnet, Ph ^a   Kelires, P C ^b,c  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); MONTE CARLO METHODS; SEMICONDUCTOR GROWTH; SILICON; STRESS ANALYSIS; SUBSTRATES; WETTING;

INTERMIXING; STRESS EVOLUTION; TRENCH FORMATION;

GERMANIUM;

EID: 3442884235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771452     Document Type: Article

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