Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

Thin Solid Films

Volumn 467, Issue 1-2, 2004, Pages 197-200

  Li, C B ^a   Cheng, B W ^a   Mao, R W ^a   Zuo, Y H ^a   Shi, W H ^a   Huang, C J ^b   Luo, L P ^a   Yu, J Z ^a   Wang, Q M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

Cavity; Ge islands; Photoluminescence; SOI

Indexed keywords

CAVITY; FREE SPECTRAL RANGES (FSR); GE ISLANDS; TELECOMMUNICATION WAVELENGTHS;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICA; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 4444245407     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.013     Document Type: Article

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