Composition of self-assembled Ge/Si islands in single and multiple layers

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2614-2616

  Schmidt, O G ^a   Denker, U ^a   Christiansen, S ^b   Ernst, F ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION PROFILE; DOME ISLANDS; GE ISLAND; GE/SI ISLANDS; HUT CLUSTERS; INTERDIFFUSION COEFFICIENTS; MULTIPLE LAYERS; ORDERS OF MAGNITUDE; SELF-ASSEMBLED; STACKED LAYER; VERTICALLY ALIGNED;

ALLOYING; DOMES; GERMANIUM;

SILICON;

EID: 79956054533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507612     Document Type: Article

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