Stranski-Krastanow transition and epitaxial island growth

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 8, 2002, Pages 813051-813054

  Cullis, A G ^a   Norris, D J ^a   Walther, T ^a   Migliorato, M A ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; INDIUM;

ARTICLE; ATOM; CALCULATION; CONCENTRATION RESPONSE; ENERGY; FILM; FORCE; MEASUREMENT; MODEL; SIMULATION; THICKNESS;

EID: 0037104327     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (41)

1. F.C. Frank and J.H. Van der Merwe, Proc. R. Soc. London, Ser. A 198, 205 (1949).
2. M. Volmer and A. Weber, Z. Phys. Chem. (Munich) 119, 277 (1926).
3. I.N. Stranski and L. Krastanow, Sitzungsber. Akad. Wiss. Wien, Math.-Naturwiss. Kl., Abt. 2B 146, 797 (1938).
4. J.A. Venables, G.D.T. Spiller, and M. Hanbrücken, Rep. Prog. Phys. 47, 399 (1984).
5. F. Glas et al., in Microscopy of Semiconducting Materials 1987, edited by A.G. Cullis and P. D. Augustus (IOP, Bristol, 1987), p. 71.
6. S. Guha, A. Madhukar, and K.C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).
7. C.W. Snyder et al., Phys. Rev. Lett. 66, 3032 (1991).
8. D. Leonard et al., Appl. Phys. Lett. 63, 3203 (1993).
9. J.M. Moison et al., Appl. Phys. Lett. 64, 196 (1994).
10. A.G. Cullis, A.J. Pidduck, and M.T. Emeny, J. Cryst. Growth 158, 15 (1996).
11. T.R. Ramachandran et al., J. Cryst. Growth 175/176, 216 (1997).
12. N. Carlsson et al., Appl. Phys. Lett. 65, 3093 (1994).
13. P.M. Petroff and S.P. DenBaars, Superlattices Microstruct. 15, 15 (1994).
14. B.R. Bennett et al., J. Cryst. Growth 175/176, 888 (1997).
15. D.J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
16. Y.-W. Mo et al., Phys. Rev. Lett. 65, 1020 (1990).
17. I. Goldfarb and G.A.D. Briggs, J. Cryst. Growth 198/199, 1032 (1999).
18. D.E. Jesson, M. Kästner, and B. Voigtländer, Phys. Rev. Lett. 84, 330 (2000).
19. R.M. Tromp, F.M. Ross, and M.C. Reuter, Phys. Rev. Lett. 84, 4641 (2000).
20. C. Ratsch and A. Zangwill, Surf. Sci. 293, 123 (1993).
21. J. Tersoff and F.K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994).
22. V.A. Shchukin et al., Phys. Rev. Lett. 75, 2968 (1995).
23. C. Priester and M. Lannoo, Phys. Rev. Lett. 75, 93 (1995).
24. Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).
25. H.T. Dobbs, D.D. Vvedensky, and A. Zangwill, Appl. Surf. Sci. 123/124, 646 (1998).
26. J. Tersoff, Phys. Rev. Lett. 81, 3183 (1998).
27. K. Nakajima, J. Cryst. Growth 203, 376 (1999).
28. T. Walther, A.G. Cullis, D.J. Norris, and M. Hopkinson, Phys. Rev. Lett. 86, 2381 (2001).
29. T. Walther, A.G. Cullis, D.J. Norris, and M. Hopkinson, in Microscopy of Semiconducting Materials, edited by A.G. Cullis and J.L. Hutchison (IOPP, Bristol, 2001), p. 85.
30. S. Fukatsu et al., Appl. Phys. Lett. 59, 2103 (1991).
31. O. Dehaese, X. Wallart, and F. Mollot, Appl. Phys. Lett. 66, 52 (1995).
32. -1.
33. 1-xAs segregation energy values are not yet available for this model, so that it is not considered further here.
34. J. Tersoff, Phys. Rev. Lett. 56, 632 (1986).
35. J. Tersoff, Phys. Rev. B 39, 5566 (1989).
36. M.A. Migliorato, A.G. Cullis, M. Fearn, and J.H. Jefferson, Phys. Rev. B 65, 115316 (2002).
37. B.A. Joyce, D.D. Vvedensky, G.R. Bell, J.G. Belk, M. Itoh, and T.S. Jones, Mater. Sci. Eng., B 67, 7 (1999).
38. OXON code derived by Materials Dept, Oxford University.
39. L.D. Landau and E.M. Lifshitz, Course of Theoretical Physics: Theory of Elasticity (Pergamon, Oxford, 1986), Vol. 7.
40. M.A. Migliorato, A.G. Cullis, M. Fearn, and J.H. Jefferson, Physica E 13, 1147 (2002).
41. A.G. Cullis, D.J. Robbins, A.J. Pidduck, and P.W. Smith, J. Cryst. Growth 123, 333 (1992).