Precise control of size and density of self-assembled Ge dot on Si(1 0 0) by carbon-induced strain-engineering

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 419-423

  Wakayama, Y ^a   Sokolov, L V ^b   Zakharov, N ^c   Werner, P ^c   Gosele U ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Ge; Photoluminescence; Quantum dot; Si; Strain engineering

Indexed keywords

CARBON; GERMANIUM; PHOTOLUMINESCENCE; SELF ASSEMBLY; SILICON; STRAIN;

STRAIN-ENGINEERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037670103     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00385-4     Document Type: Conference Paper

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