Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1954071-1954075

  Cho, Benjamin ^b   Schwarz Selinger, Thomas ^a   Ohmori, Kenji ^b   Cahill, David G ^b   Greene, J E ^b  

^a EURATOM ASSOCIATION   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CALCULATION; FILM; GAS; GEOMETRY; GROWTH RATE; HIGH TEMPERATURE; SURFACE PROPERTY;

EID: 0037113562     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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