Nucleation of Ge quantum dots on the C-alloyed Si(001) surface

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 176-179

  Leifeld, O ^a,b   Beyer, A ^a   Muller E ^a   Grutzmacher D ^a   Kern, K ^b,c  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b EPFL   (Switzerland)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

ULTRA-HIGH VACUUM SCANNING TUNNELING MICROSCOPY; VOLMER-WEBER GROWTH;

SEMICONDUCTING FILMS;

EID: 0034497224     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01497-8     Document Type: Article

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