TEM measurement of strain in coherent quantum heterostructures

Ultramicroscopy

Volumn 84, Issue 3-4, 2000, Pages 225-233

  Miller, Peter D ^a   Liu, Chuan Pu ^a   Murray Gibson, J ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

025; Strain measurement; Transmission electron microscopy; Transmission electron microscopy examination of materials

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRAIN MEASUREMENT;

HOWIE-WHELAN IMAGE SIMULATION; LATTICE PLANE BENDING; QUANTUM HETEROSTRUCTURES;

TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

ARTICLE; DIFFRACTION; IMAGING; MATHEMATICS; QUANTUM CHEMISTRY; SIMULATION; SURFACE PROPERTY; TECHNIQUE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0034255939     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(00)00036-X     Document Type: Article

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