Annealing of phosphorus-doped Ge islands on Si(001)

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1562-1567

  Kamins, T I ^a   Medeiros Ribeiro, G ^a,b   Ohlberg, D A A ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; DOPING (ADDITIVES); GERMANIUM; PHOSPHORUS; SILICON; THERMODYNAMIC PROPERTIES;

COARSENING; SURFACE DIFFUSION;

ATOMIC PHYSICS;

EID: 1142292359     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635994     Document Type: Article

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