3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a si-rich core in ge domes on si(100)

Physical Review Letters

Volumn 91, Issue 17, 2003, Pages

  Malachias, A ^a   Kycia, S ^b   Medeiros Ribeiro, G ^b,c   Magalhaes Paniago R ^a,b   Kamins, T I ^c   Williams, R Stanley ^c  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRON MICROSCOPY; FABRICATION; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

EPITAXIAL NANOCRYSTALS; SELF-ASSEMBLED HETEROEPITAXIAL STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 3042774722     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.176101     Document Type: Article

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