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Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 70-75

Influence of pre-grown carbon on the formation of germanium dots

(5) Schmidt, O G a Lange, C a Eberl, K a Kienzle, O b Ernst, F b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

Ge dots; Molecular beam epitaxy; Photoluminescence; Quantum dots; SiGeC; Strain compensation

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; STRAIN; THERMAL EFFECTS; WETTING;

CARBON-INDUCED GERMANIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032068405 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00446-5 Document Type: Article

Times cited : (28)

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