MBE grown Si/SiGe undulating layer superlattices for infrared light detection

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 73-76

  Winnerl, S ^a   Buca, D ^a   Lenk, S ^a   Buchal, Ch ^a   Mantl, S ^a   Xu, D X ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Infrared light detector; MSM detector; SiGe; Undulating layer superlattice

Indexed keywords

INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

METAL-SEMICONDUCTOR-METAL (MSM) DETECTORS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037074774     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00760-7     Document Type: Conference Paper

References (14)