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Physical Review Letters

Volumn 86, Issue 11, 2001, Pages 2381-2384

Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs

(4) Walther, T a Cullis, A G b Norris, D J b Hopkinson, M b

a UNIVERSITY OF BONN (Germany)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; FILM GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

FIELD EMISSION GUN TRANSMISSION ELECTRON MICROSCOPY (FEGTEM); STRANSKI-KRASTANOW TRANSITION;

SEMICONDUCTING FILMS;

EID: 0035848270 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.2381 Document Type: Article

Times cited : (247)

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