SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 248-251

C-induced Ge dots: A versatile tool to fabricate ultra-small Ge nanostructures

(5) Schmidt, O G a Lange, C a Eberl, K a Kienzle, O b Ernst, F b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

Ge islands; Hut clusters; Microstructures; Quantum dots; SiGeC; Vertical alignment

Indexed keywords

CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; MONOLAYERS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

ISLAND FORMATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032313042 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01244-9 Document Type: Article

Times cited : (9)

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