Room-temperature light-emitting diodes with Ge islands

Materials Science in Semiconductor Processing

Volumn 3, Issue 5-6, 2000, Pages 383-387

  Vescan, L ^a   Chretien, O ^a   Stoica, T ^b   Mateeva, E ^c   Muck A ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CURRENT DENSITY; ENERGY GAP; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXY; SELF ORGANIZED GROWTH;

LIGHT EMITTING DIODES;

EID: 0034291449     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00059-7     Document Type: Article

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