Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

Journal of Applied Physics

Volumn 87, Issue 6, 2000, Pages 2926-2930

  Kolobov, A V ^a,b,c  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54849414242     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.372279     Document Type: Article

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