Direct determination of strain and composition profiles in SiGe islands by anomalous x-ray diffraction at high momentum transfer

Physical Review Letters

Volumn 90, Issue 6, 2003, Pages

  Schulli T U ^a,b   Stangl, J ^a   Zhong, Z ^a   Lechner, R T ^a   Sztucki, M ^b   Metzger, T H ^b   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DIFFRACTION; LATTICE CONSTANTS; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SENSITIVITY ANALYSIS; STRAIN RATE; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

BRAGG REFLECTION; COMPLEX ATOMIC FORM FACTORS; GRAZING INCIDENCE DIFFRACTION; MOMENTUM TRANSFER; SILICON GERMANIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037435812     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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