Alignment of Ge three-dimensional islands on faceted Si(001) surfaces

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 55-59

  Sakamoto, Kunihiro ^a   Matsuhata, Hirofumi ^a   Tanner, Martin O ^b   Wang, Dawen ^b   Wang, Kang L ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Germanium; Quantum dot; Self organization; Silicon; Stanski Krastanov growth

Indexed keywords

DEFORMATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN;

STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032064439     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00443-X     Document Type: Article

References (12)

1. H.-J. Gossman, L.C. Feldman, W.M. Gibson, Surf. Sci. 155 (1985) 413.
2. M. Asai, H. Ueba, C. Tatsuyama, J. Appl. Phys. 58 (1985) 2577.
3. K. Sakamoto, T. Sakamoto, S. Nagao, G. Hashiguchi, K. Kuniyoshi, Y. Bando, Jpn. J. Appl. Phys. (1987) 666.
4. K. Miki, K. Sakamoto, T. Sakamoto, Mater. Res. Soc. Symp. Proc. 148 (1989) 323.
5. A. Sasaki, Thin Solid Films 267 (1995) 24.
6. D.S.L. Mui, D. Leonard, L.A. Coldren, P.M. Petroff, Appl. Phys. Lett. 66 (1995) 1620.
7. S. Jeppesen, M.S. Miller, D. Hessman, B. Kowalski, I. Maxumov, L. Samuelson, Appl. Phys. Lett. 68 (1996) 2228.
8. M. Kitamura, M. Nishioka, J. Oshinowo, Y. Arakawa, Appl. Phys. Lett. 66 (1995) 3663.
9. A. Ishizaka, Y. Shiraki, J. Electrochem. Soc. 133 (1986) 666.
10. S. Matsumura, M. Toyohara, Y. Tomokiyo, Phil. Mag. A62 (1990) 653.
11. D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.
12. E.S. Kim, N. Usami, H. Sunamura, S. Fukatsu, Y. Shiraki, J. Cryst. Growth 175-176 (1997) 519.