Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 296-302

  Baribeau, J M ^a   Lockwood, D J ^a   Balle, J ^b   Rolfe, S J ^a   Sproule, G I ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

Carbon; ECR plasma; Germanium; MBE; Raman scattering spectroscopy; Silicon; X ray diffraction

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; MOLECULAR BEAM EPITAXY; MULTILAYERS; PARTIAL PRESSURE; PLASMA APPLICATIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRAIN; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

RAMAN SCATTERING SPECTROSCOPY; STRAIN COMPENSATION;

SILICON ALLOYS;

EID: 0037074856     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00802-9     Document Type: Conference Paper

References (14)