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Volumn 90, Issue 5, 2001, Pages 2565-2574

Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0040028902     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389335     Document Type: Article
Times cited : (23)

References (30)
  • 7
    • 0040743514 scopus 로고    scopus 로고
    • Properties of silicon, germanium and SiGe:Carbon
    • edited by E. Kasper and K. Lyutovich INSPEC, London, Chap. 1.1
    • D. E. Jesson, in Properties of Silicon, Germanium and SiGe:Carbon, EMIS Datareviews Ser. No. 24, edited by E. Kasper and K. Lyutovich (INSPEC, London, 2000), Chap. 1.1, pp. 3-8.
    • (2000) EMIS Datareviews Ser. , vol.24 , pp. 3-8
    • Jesson, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.