Origin of apparent critical thickness for island formation in heteroepitaxy

Physical Review Letters

Volumn 93, Issue 21, 2004, Pages

  Tu, Yuhai ^a   Tersoff, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MODELS; HETEROEPITAXIAL GROWTH; STRAINED-LAYER GROWTH; SURFACE SEGREGRATION;

COMPOSITION; DEGREES OF FREEDOM (MECHANICS); EPITAXIAL GROWTH; INTERFACIAL ENERGY; MORPHOLOGY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SENSITIVITY ANALYSIS; STIFFNESS; SUBSTRATES; SURFACE PROPERTIES;

MONOLAYERS;

EID: 42749098986     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.216101     Document Type: Article

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