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Surface Science

Volumn 461, Issue 1-3, 2000, Pages

Ordered growth of Ge islands above a misfit dislocation network in a Ge layer on Si(111)

(2) Voigtländer, Bert a Theuerkauf, Nils a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Epitaxy; Germanium; Molecular beam epitaxy; Scanning tunneling microscopy; Self assembly; Semiconductor semiconductor thin film structures; Silicon

Indexed keywords

EID: 0141751116 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)00620-8 Document Type: Article

Times cited : (37)

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