Changes in morphology using atomic hydrogen during Si/Si1-xGex molecular beam epitaxy growth on Si (100)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1933-1936

  Silvestre, C ^a   Jernigan, G G ^a   Twigg, M E ^a   Thompson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000875706     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

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