Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with Zr O2 high- k gate dielectrics on Ge epitaxial layers

Applied Physics Letters

Volumn 90, Issue 20, 2007, Pages

  Oh, Jungwoo ^a   Majhi, Prashant ^a   Kang, Chang Yong ^a   Yang, Ji Woon ^a   Tseng, Hsing Huang ^a   Jammy, Raj ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; GATE DIELECTRICS; LEAKAGE CURRENTS; MOS CAPACITORS; PYROLYSIS; SURFACE ANALYSIS; THERMODYNAMIC STABILITY;

ELEVATED TEMPERATURES; EQUIVALENT THICKNESS; GATE STACKS;

GERMANIUM ALLOYS;

EID: 34249050458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2740108     Document Type: Article

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