Mechanism of germanium plasma nitridation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2442-2448

  Sugawara, Takuya ^a,b   Sreenivasan, Raghavasimhan ^b   McIntyre, Paul C ^b  

^a TOKYO ELECTRON LTD   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM OXYNITRIDE; OPTICAL EMISSION SPECTROSCOPY (OES); PLASMA NITRIDATION; SILICON OXYNITRIDE;

EMISSION SPECTROSCOPY; GERMANIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; SILICON; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA APPLICATIONS;

EID: 33749323292     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348887     Document Type: Article

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