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Volumn 97, Issue 11, 2010, Pages

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/ GeO2 interlayer

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CAPACITANCE-VOLTAGE HYSTERESIS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; IN-SITU; K-VALUES; LOW-LEAKAGE CURRENT; MINIMUM DENSITY; N-TYPE GE; PASSIVATION LAYER; TIO; ULTRA-THIN;

EID: 77956812194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3490710     Document Type: Article
Times cited : (41)

References (17)
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    • Band offsets and Schottky barrier heights of high dielectric constant oxides
    • DOI 10.1063/1.1506388
    • P. W. Peacock and J. Pobertson, J. Appl. Phys. JAPIAU 0021-8979 92, 4712 (2002). 10.1063/1.1506388 (Pubitemid 35328353)
    • (2002) Journal of Applied Physics , vol.92 , Issue.8 , pp. 4712
    • Peacock, P.W.1    Robertson, J.2
  • 4
    • 10844282779 scopus 로고    scopus 로고
    • High dielectric constant oxides
    • DOI 10.1051/epjap:2004206
    • J. Robertson, Eur. Phys. J.: Appl. Phys. EPAPFV 1286-0042 28, 265 (2004). 10.1051/epjap:2004206 (Pubitemid 40002196)
    • (2004) EPJ Applied Physics , vol.28 , Issue.3 , pp. 265-291
    • Robertson, J.1
  • 8
    • 71549167991 scopus 로고    scopus 로고
    • APPLAB 0003-6951. 10.1063/1.3265947
    • W. B. Chen and A. Chin, Appl. Phys. Lett. APPLAB 0003-6951 95, 212105 (2009). 10.1063/1.3265947
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 212105
    • Chen, W.B.1    Chin, A.2
  • 10
  • 11
    • 0034187380 scopus 로고    scopus 로고
    • JVTBD9 1071-1023. 10.1116/1.591472
    • J. Robertson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 1785 (2000). 10.1116/1.591472
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
    • Robertson, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.