Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 369-372

  Bai, Weiping ^a   Kwong, Dim Lee ^a,b,c  

^a The University of Texas at Austin   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Ammonia treatment; Germanium; Hafnium oxide; High dielectric; MOS; Reliability; Time dependent dielectric breakdown (TDDB)

Indexed keywords

AMMONIA; CHARGE TRAPPING; DIELECTRIC MATERIALS; ELECTRIC FIELDS; GERMANIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES;

STRESS-POLARITY DEPENDENCE; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 34247588235     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.894654     Document Type: Article

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