Atomic layer deposition of ZrO2La2 O3 high- k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Abermann, S ^a   Bethge, O ^a   Henkel, C ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; FREE OXIDES; GATE ELECTRODES; GATE LEAKAGE CURRENT DENSITY; HIGH-K DIELECTRIC; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; RELATIVE DIELECTRIC CONSTANT; ULTRA-THIN;

ALUMINA; ATOMS; CAPACITANCE; CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; ELECTROLYTIC CAPACITORS; GERMANIUM; LANTHANUM; METALLIC COMPOUNDS; MOS DEVICES; OXYGEN; PLATINUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67649948779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3173199     Document Type: Article

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