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Volumn 14, Issue 5, 2011, Pages

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma

(7) Xie, Qi a Deduytsche, Davy a Schaekers, Marc b Caymax, Matty b Delabie, Annelies b Qu, Xin Ping c Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE-VOLTAGE HYSTERESIS; ELECTRICAL PASSIVATION; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC LAYERS; GATE STACKS; GE SUBSTRATES; GE(100); IN-SITU; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR; N-TYPE GE; PLASMA PASSIVATION; PLASMA PRE-TREATMENT;

CAPACITANCE; CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS;

PASSIVATION;

EID: 79952518788 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3551461 Document Type: Article

Times cited : (20)

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