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Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

Submonolayer barium passivation study for germanium(100)/molecular beam epitaxial Al2 O3

(5) Sun, X a,b Merckling, C b Heyns, M b,c Dekoster, J b Caymax, M b

a Yale University (United States)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONDUCTANCE TECHNIQUES; DESORPTION TEMPERATURES; DOSE-DEPENDENT; FORMING GAS ANNEALING; INTERFACE CHARACTERISTIC; INTERFACE TRAPS; PASSIVATION EFFECT; SUBMONOLAYER; SYMMETRIC DISTRIBUTIONS; THERMALLY STABLE;

BARIUM; DESORPTION; GERMANIUM; MONOLAYERS; MOS CAPACITORS; PHASE INTERFACES;

PASSIVATION;

EID: 79959420462 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595685 Document Type: Article

Times cited : (10)

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