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Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

(6) Sawkar Mathur, Monica a Perng, Ya Chuan a Lu, Jun b Blom, Hans Olof b Bargar, John c Chang, Jane P a

a UNIVERSITY OF CALIFORNIA (United States)

b UPPSALA UNIVERSITY (Sweden)

c SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC PROPERTIES; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; LIGHT METALS; OXIDE FILMS; OXIDES; PHYSICAL VAPOR DEPOSITION; THIN FILMS;

ABSORPTION FINE STRUCTURES; ALUMINUM OXIDES; ATOMIC LAYERS; CATION RATIOS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; HAFNIUM ALUMINATES; HAFNIUM OXIDES; INTERFACE STATES; INTERFACIAL PROPERTIES;

ALUMINA;

EID: 57649120338 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3040311 Document Type: Article

Times cited : (12)

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