On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 547-556

  Martens, Koen ^a,b,c   Chui, Chi On ^d   Brammertz, Guy ^b   De Jaeger, Brice ^b   Kuzum, Duygu ^a   Meuris, Marc ^b   Heyns, Marc M ^b   Krishnamohan, Tejas ^a   Saraswat, Krishna ^a   Maes, Herman E ^b,e   Groeseneken, Guido ^b,e  

^a STANFORD UNIVERSITY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

Alternative substrates; Conductance method; Electrical characterization; Ge MOSFET; III V; Interface trap density extraction; Nicollian Goetzberger

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; INTERFACES (MATERIALS); MOSFET DEVICES; SUBSTRATES;

ALTERNATIVE SUBSTRATES; CONDUCTANCE METHOD; INTERFACE TRAP DENSITY;

MOS DEVICES;

EID: 39749167824     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912365     Document Type: Article

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