Process temperature dependent high frequency capacitance-voltage response of ZrO2 / GeO2 /germanium capacitors

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Bethge, O ^a   Abermann, S ^a   Henkel, C ^a   Straif, C J ^a   Hutter, H ^a   Smoliner, J ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; ELECTRICAL AND STRUCTURAL PROPERTIES; GERMANIUM SUBSTRATES; HIGH FREQUENCY CAPACITANCE; MINORITY CARRIER; PROCESS TEMPERATURE; SUBSTRATE TEMPERATURE; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; TRAP LEVELS;

CAPACITANCE; CAPACITORS; CARRIER MOBILITY; GERMANIUM; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; ZIRCONIUM ALLOYS;

MOS CAPACITORS;

EID: 76449099281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3295698     Document Type: Article

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