Effect of hafnium germanate formation on the interface of Hf O2 /germanium metal oxide semiconductor devices

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Van Elshocht, S ^a   Caymax, M ^a   Conard, T ^a   De Gendt, S ^a   Hoflijk, I ^a   Houssa, M ^a   De Jaeger, B ^a   Van Steenbergen, J ^a   Heyns, M ^a   Meuris, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); OXYGEN; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMODYNAMIC STABILITY;

GE SUBSTRATES; HAFNIUM GERMANATE; INTERFACE STATE DENSITY; SUBSTRATE INTERFACE DEVELOPMENT;

MOS DEVICES;

EID: 33646693877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192576     Document Type: Article

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