Effect of Ge surface nitridation on the Ge/HfO2/Al MOS devices

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 455-460

  Garg, Reenu ^a,b   Misra, Durga ^a   Guha, Supratik ^c  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b IBM   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Ge bandgap; Hysteresis; Low temperature; Voltage stress

Indexed keywords

CAPACITORS; GERMANIUM; HYSTERESIS; MOS DEVICES; SURFACE PHENOMENA; VOLTAGE CONTROL;

ELECTRON TRAPPING; GE BANDGAP; VOLTAGE STRESS;

NITRIDES;

EID: 33750837273     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.881457     Document Type: Article

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