Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Kutsuki, Katsuhiro ^a   Okamoto, Gaku ^a   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FOUR-ORDER; GE(100); GERMANIUM OXYNITRIDE; INTERFACE STATE DENSITY; LEAKAGE REDUCTION; NITRIDE LAYERS; PLASMA NITRIDATION; PLASMA TREATMENT; POST-NITRIDATION; SURFACE NITROGEN; THERMALLY GROWN OXIDE; ULTRA-THIN; ULTRATHIN THERMAL OXIDES;

ELECTRIC PROPERTIES; GATES (TRANSISTOR); GERMANIUM; MOS CAPACITORS; NITRIDATION; NITRIDES; PLASMA APPLICATIONS; PLASMAS;

GATE DIELECTRICS;

EID: 67650745597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3171938     Document Type: Article

References (15)

1. M. L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, Appl. Phys. Lett. 0003-6951 79, 3344 (2001). 10.1063/1.1417515
2. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and C. Saraswat, IEEE Electron Device Lett. 0741-3106 23, 473 (2002). 10.1109/LED.2002.801319
3. H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 0003-6951 93, 032104 (2008). 10.1063/1.2959731
4. K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi, Jpn. J. Appl. Phys. 47, 2349 (2008). 10.1143/JJAP.47.2349
5. M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M. M. Heyns, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 0003-6951 93, 161909 (2008). 10.1063/1.3006320
6. T. Hosoi, K. Kutsuki, G. Okamoto, M. Saito, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 0003-6951 94, 202112 (2009). 10.1063/1.3143627
7. S. Saito, T. Hosoi, H. Watanabe, and T. Ono, Appl. Phys. Lett. 0003-6951 95, 011908 (2009). 10.1063/1.3168501
8. C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Electron Device Lett. 0741-3106 25, 613 (2004). 10.1109/LED.2004.833830
9. D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 723.
10. N. Lu, W. Bai, A. Ramirez, C. Mouli, A. Ritenour, M. L. Lee, D. Antoniadis, and D. L. Kwong, Appl. Phys. Lett. 0003-6951 87, 051922 (2005). 10.1063/1.2001757
11. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, J. Appl. Phys. 0021-8979 100, 014101 (2006). 10.1063/1.2206395
12. K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 0003-6951 91, 163501 (2007). 10.1063/1.2799260
13. K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, and H. Watanabe, Jpn. J. Appl. Phys. 47, 2415 (2008). 10.1143/JJAP.47.2415
14. K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, and H. Watanabe, Appl. Surf. Sci. 0169-4332 255, 6335 (2009). 10.1016/j.apsusc.2009.02.011
15. S. R. Amy, Y. J. Chabal, F. Amy, A. Kahn, C. Krugg, and P. Kirsch, Mater. Res. Soc. Symp. Proc. 0272-9172 917E, 0917-E01-05 (2006).