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Volumn 99, Issue 5, 2011, Pages

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

(10) Deng, Shaoren a Xie, Qi a Deduytsche, Davy a Schaekers, Marc b Lin, Dennis b Caymax, Matty b Delabie, Annelies b Van Den Berghe, Sven c Qu, Xinping d Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c BELGIAN NUCLEAR RESEARCH CENTRE (Belgium)

d FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIXED CHARGE DENSITY; FIXED CHARGES; FLAT-BAND VOLTAGE; FORMING GAS ANNEALING; GATE STACKS; HIGH-K GATE STACKS; IN-SITU; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE THICKNESS; PLASMA PASSIVATION; THERMAL BUDGET;

ANNEALING; CAPACITORS; DIELECTRIC DEVICES; GERMANIUM; HAFNIUM OXIDES; LOGIC GATES; PASSIVATION; PLASMA DEPOSITION; SEMICONDUCTOR DEVICES;

METAL ANALYSIS;

EID: 80051592774 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3622649 Document Type: Article

Times cited : (28)

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