Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Tsipas, P ^a   Volkos, S N ^a   Sotiropoulos, A ^a   Galata, S F ^a   Mavrou, G ^a   Tsoutsou, D ^a   Panayiotatos, Y ^a   Dimoulas, A ^a   Marchiori, C ^b   Fompeyrine, J ^b  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; GERMANIUM; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; X RAY DIFFRACTION; ZIRCONIA;

ATOMIC OXYGEN BEAM DEPOSITION; DIELECTRIC PERMITTIVITIES; TETRAGONAL PHASE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 51349107303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977555     Document Type: Article

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