-
1
-
-
77952341849
-
Germanium for advanced CMOS anno 2009: A SWOT analysis
-
M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G.Wang, R. Loo, E. Simoen, J. Mitard, B. Jaeger, G. Hellings, K. Meyer, and M. Heyns, "Germanium for advanced CMOS anno 2009: A SWOT analysis," in IEDM Tech. Dig., 2009, pp. 461-464.
-
(2009)
IEDM Tech. Dig.
, pp. 461-464
-
-
Caymax, M.1
Eneman, G.2
Bellenger, F.3
Merckling, C.4
Delabie, A.5
Wang, G.6
Loo, R.7
Simoen, E.8
Mitard, J.9
Jaeger, B.10
Hellings, G.11
Meyer, K.12
Heyns, M.13
-
2
-
-
34548230096
-
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
-
Aug.
-
A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. V. Elshocht, M. Caymax,M. Heyns, and M. Meuris, "Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide," Appl. Phys. Lett., vol. 91, no. 8, p. 082904, Aug. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, Issue.8
, pp. 082904
-
-
Delabie, A.1
Bellenger, F.2
Houssa, M.3
Conard, T.4
Elshocht, S.V.5
Caymaxm. Heyns, M.6
Meuris, M.7
-
3
-
-
77951878588
-
2-based technology
-
May
-
2-based technology," IEEE Electron Device Lett., vol. 31, no. 5, pp. 402-404, May 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.5
, pp. 402-404
-
-
Bellenger, F.1
Jaeger, B.2
Merckling, C.3
Houssa, M.4
Penaud, J.5
Nyns, L.6
Vrancken, E.7
Caymax, M.8
Meuris, M.9
Hoffmann, T.10
Meyer, K.11
Heyns, M.12
-
4
-
-
79955539932
-
2 n-MOSFETs with two-step oxidation
-
May
-
2 n-MOSFETs with two-step oxidation," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1295-1301, May 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.5
, pp. 1295-1301
-
-
Lee, C.H.1
Nishimura, T.2
Nagashio, K.3
Kita, K.4
Toriumi, A.5
-
5
-
-
48249136210
-
2 surface passivation
-
Jul.
-
2 surface passivation," Appl. Phys. Lett., vol. 93, no. 3, p. 032104, Jul. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.93
, Issue.3
, pp. 032104
-
-
Matsubara, H.1
Sasada, T.2
Takenaka, M.3
Takagi, S.4
-
6
-
-
50249133026
-
2 surface passivation
-
Aug.
-
2 surface passivation," Appl. Phys. Lett., vol. 93, no. 7, p. 073504, Aug. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.93
, Issue.7
, pp. 073504
-
-
Xie, R.1
He, W.2
Yu, M.3
Zhu, C.4
-
7
-
-
77958086741
-
Pt-assisted oxidation of (100)-Ge/High-k interfaces and improvement of their electrical quality
-
Oct.
-
C. Henkel, O. Bethge, S. Abermann, S. Puchner, H. Hutter, and E. Bertagnolli, "Pt-assisted oxidation of (100)-Ge/High-k interfaces and improvement of their electrical quality," Appl. Phys. Lett., vol. 97, no. 15, p. 152 904, Oct. 2010.
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.15
, pp. 152-904
-
-
Henkel, C.1
Bethge, O.2
Abermann, S.3
Puchner, S.4
Hutter, H.5
Bertagnolli, E.6
-
8
-
-
41749107944
-
Ge-interface engineering with ozone oxidation for low interface-state density
-
Apr.
-
D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, "Ge-interface engineering with ozone oxidation for low interface-state density," IEEE Electron Device Lett., vol. 29, no. 4, pp. 328-330, Apr. 2008.
-
(2008)
IEEE Electron Device Lett.
, vol.29
, Issue.4
, pp. 328-330
-
-
Kuzum, D.1
Krishnamohan, T.2
Pethe, A.J.3
Okyay, A.K.4
Oshima, Y.5
Sun, Y.6
McVittie, J.P.7
Pianetta, P.A.8
McIntyre, P.C.9
Saraswat, K.C.10
-
9
-
-
73349121950
-
2 interlayer for high-k gate dielectrics/Ge by electron-cyclotron-resonance plasma techniques
-
Jan.
-
2 interlayer for high-k gate dielectrics/Ge by electron-cyclotron-resonance plasma techniques," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 282-287, Jan. 2010.
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, Issue.1
, pp. 282-287
-
-
Fukuda, Y.1
Yazaki, Y.2
Otani, Y.3
Sato, T.4
Toyota, H.5
Ono, T.6
-
10
-
-
79952518788
-
2 plasma
-
Feb.
-
2 plasma," Electrochem. Solid-State Lett., vol. 14, no. 5, pp. G20-G22, Feb. 2011.
-
(2011)
Electrochem. Solid-State Lett.
, vol.14
, Issue.5
-
-
Xie, Q.1
Deduytsche, D.2
Schaekers, M.3
Caymax, M.4
Delabie, A.5
Qu, X.P.6
Detavernier, C.7
-
11
-
-
79952937507
-
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
-
Mar.
-
R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi, "Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation," Appl. Phys. Lett., vol. 98, no. 11, p. 112 902, Mar. 2011.
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.11
, pp. 112-902
-
-
Zhang, R.1
Iwasaki, T.2
Taoka, N.3
Takenaka, M.4
Takagi, S.5
-
12
-
-
77952365206
-
Enabling the high performance InGaAs/Ge CMOS: A common gate stack solution
-
D. Lin, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, H. Bender, T. Conard, W. H. Tseng, J. C. Lin, W. E. Wang, K. Temst, A. Vatomme, J. Mitard, M. Caymax, M. Meuris, M. Heyns, and T. Hoffmann, "Enabling the high performance InGaAs/Ge CMOS: A common gate stack solution," in IEDM Tech. Dig., 2009, pp. 327-330.
-
(2009)
IEDM Tech. Dig.
, pp. 327-330
-
-
Lin, D.1
Brammertz, G.2
Sioncke, S.3
Fleischmann, C.4
Delabie, A.5
Martens, K.6
Bender, H.7
Conard, T.8
Tseng, W.H.9
Lin, J.C.10
Wang, W.E.11
Temst, K.12
Vatomme, A.13
Mitard, J.14
Caymax, M.15
Meuris, M.16
Heyns, M.17
Hoffmann, T.18
-
13
-
-
75749127285
-
Border traps in Al2O3/In0.53Ga0.47As(100) gate stacks and their passivation by hydrogen anneals
-
Jan.
-
E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, "Border traps in Al2O3/In0.53Ga0.47As(100) gate stacks and their passivation by hydrogen anneals," Appl. Phys. Lett., vol. 96, no. 1, p. 012906, Jan. 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.1
, pp. 012906
-
-
Kim, E.J.1
Wang, L.2
Asbeck, P.M.3
Saraswat, K.C.4
McIntyre, P.C.5
-
14
-
-
34848812841
-
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
-
Sep.
-
G. Brammertz, K. Martens, S. Sioncke, A. Delabie, and M. Caymax, "Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures," Appl. Phys. Lett., vol. 91, no. 13, p. 133 510, Sep. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, Issue.13
, pp. 133-510
-
-
Brammertz, G.1
Martens, K.2
Sioncke, S.3
Delabie, A.4
Caymax, M.5
-
15
-
-
39749167824
-
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
-
Feb.
-
K. Marten, C. O. Chui, G. Brammertz, B. D. Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, "On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 547-556, Feb. 2008.
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, Issue.2
, pp. 547-556
-
-
Marten, K.1
Chui, C.O.2
Brammertz, G.3
Jaeger, B.D.4
Kuzum, D.5
Meuris, M.6
Heyns, M.M.7
Krishnamohan, T.8
Saraswat, K.9
Maes, H.E.10
Groeseneken, G.11
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