메뉴 건너뛰기




Volumn 32, Issue 12, 2011, Pages 1656-1658

High-performance ge mos capacitors by o2 plasma passivation and o2 ambient annealing

Author keywords

Ge; Interface passivation; O2 ambient annealing

Indexed keywords

C-V HYSTERESIS; CAPACITANCE VOLTAGE; CMOS DEVICES; COMPREHENSIVE PROPERTIES; ENERGY DISTRIBUTIONS; EQUIVALENT OXIDE THICKNESS; FLAT BAND; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; HIGH QUALITY; IN-SITU; INTERFACE PASSIVATION; MODULATION EFFICIENCY; N-TYPE GE; PLASMA PASSIVATION; POSITIVE BIAS; STRONG INVERSION;

EID: 81855194369     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2166993     Document Type: Article
Times cited : (18)

References (15)
  • 2
    • 34548230096 scopus 로고    scopus 로고
    • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
    • Aug.
    • A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. V. Elshocht, M. Caymax,M. Heyns, and M. Meuris, "Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide," Appl. Phys. Lett., vol. 91, no. 8, p. 082904, Aug. 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.8 , pp. 082904
    • Delabie, A.1    Bellenger, F.2    Houssa, M.3    Conard, T.4    Elshocht, S.V.5    Caymaxm. Heyns, M.6    Meuris, M.7
  • 7
    • 77958086741 scopus 로고    scopus 로고
    • Pt-assisted oxidation of (100)-Ge/High-k interfaces and improvement of their electrical quality
    • Oct.
    • C. Henkel, O. Bethge, S. Abermann, S. Puchner, H. Hutter, and E. Bertagnolli, "Pt-assisted oxidation of (100)-Ge/High-k interfaces and improvement of their electrical quality," Appl. Phys. Lett., vol. 97, no. 15, p. 152 904, Oct. 2010.
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.15 , pp. 152-904
    • Henkel, C.1    Bethge, O.2    Abermann, S.3    Puchner, S.4    Hutter, H.5    Bertagnolli, E.6
  • 11
    • 79952937507 scopus 로고    scopus 로고
    • Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
    • Mar.
    • R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi, "Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation," Appl. Phys. Lett., vol. 98, no. 11, p. 112 902, Mar. 2011.
    • (2011) Appl. Phys. Lett. , vol.98 , Issue.11 , pp. 112-902
    • Zhang, R.1    Iwasaki, T.2    Taoka, N.3    Takenaka, M.4    Takagi, S.5
  • 13
    • 75749127285 scopus 로고    scopus 로고
    • Border traps in Al2O3/In0.53Ga0.47As(100) gate stacks and their passivation by hydrogen anneals
    • Jan.
    • E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, "Border traps in Al2O3/In0.53Ga0.47As(100) gate stacks and their passivation by hydrogen anneals," Appl. Phys. Lett., vol. 96, no. 1, p. 012906, Jan. 2010.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.1 , pp. 012906
    • Kim, E.J.1    Wang, L.2    Asbeck, P.M.3    Saraswat, K.C.4    McIntyre, P.C.5
  • 14
    • 34848812841 scopus 로고    scopus 로고
    • Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
    • Sep.
    • G. Brammertz, K. Martens, S. Sioncke, A. Delabie, and M. Caymax, "Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures," Appl. Phys. Lett., vol. 91, no. 13, p. 133 510, Sep. 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.13 , pp. 133-510
    • Brammertz, G.1    Martens, K.2    Sioncke, S.3    Delabie, A.4    Caymax, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.