High FET performance for a future CMOS GeO2-based technology

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 402-404

  Bellenger, Florence ^a,b   De Jaeger, Brice ^a   Merckling, Clement ^a   Houssa, Michel ^c   Penaud, Julien ^d   Nyns, Laura ^a   Vrancken, Evi ^a   Caymax, Matty ^a   Meuris, Marc ^a   Hoffmann, Thomas ^a   De Meyer, Kristin ^a,b   Heyns, Marc ^a,c  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d Riber SA   (Germany)

Author keywords

Germanium (Ge); High dielectric; Interfacial quality; Metal oxide semiconductor field effect transistors (MOSFETs); Molecular beam deposition (MBD)

Indexed keywords

ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FERMI LEVEL PINNING; GATE STACKS; HIGH CARRIER MOBILITY; HIGH QUALITY; HIGH-PERFORMANCE CMOS TECHNOLOGY; INTERFACE STATE DENSITY; INTERFACIAL LAYER; INTERFACIAL QUALITIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS); MOLECULAR BEAM DEPOSITION; RADICAL OXIDATION;

BELT DRIVES; CARRIER MOBILITY; CHEMICAL MODIFICATION; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; GERMANIUM; GERMANIUM OXIDES; ION BEAMS; MOLECULAR BEAMS; MOSFET DEVICES; PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 77951878588     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2044011     Document Type: Article

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