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Volumn 98, Issue 20, 2011, Pages

Crystalline ZrO2 -gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2 O3 as passivation layer

(6) Wu, Yung Hsien a Wu, Min Lin a Lyu, Rong Jhe a Wu, Jia Rong a Chen, Lun Lun a Lin, Chia Chun a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; GATE BIAS; GATE STACKS; GE SURFACES; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PASSIVATION LAYER; SI SUBSTRATES; WIDE BAND GAP;

CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; LOGIC GATES; MOS CAPACITORS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

SEMICONDUCTING SILICON;

EID: 79957544678 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3590923 Document Type: Article

Times cited : (21)

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