Fabrication of Ta2 O5 Ge Nx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  Otani, Yohei ^a   Itayama, Yasuhiro ^a   Tanaka, Takuo ^a   Fukuda, Yukio ^a   Toyota, Hiroshi ^b   Ono, Toshiro ^b   Mitsui, Minoru ^c   Nakagawa, Kiyokazu ^c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b HIROSAKI UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; MISFET DEVICES; NITRIDATION; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE INSULATOR STACKS; GERMANIUM NITRIDES; TANTALUM PENTAOXIDES;

GATES (TRANSISTOR);

EID: 34047262677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2720345     Document Type: Article

References (23)

1. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
2. V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004).
3. Y. Igarashi, K. Kurumada, and T. Niimi, Jpn. J. Appl. Phys. 7, 300 (1968).
4. Q. Hua, J. Rosenberg, J. Ye, and E. S. Yang, J. Appl. Phys. 53, 8969 (1982).
5. D. Aubel, M. Diani, L. Kubler, J. L. Bischoff, and D. Bolmont, J. Non-Cryst. Solids 187, 319 (1995).
6. M. Mukhopadhyay, S. K. Ray, and C. K. Maiti, J. Vac. Sci. Technol. B 14, 1682 (1996).
7. T. Sugawara, R. Sreenivasan, and P. C. McIntyre, J. Vac. Sci. Technol. B 24, 2442 (2006).
8. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, Appl. Phys. Lett. 85, 3181 (2004).
9. S. Matsuo and M. Kiuchi, Jpn. J. Appl. Phys., Part 2 22, L210 (1983).
10. M. Shimada, T. Ono, H. Nishimura, and S. Matsuo, J. Vac. Sci. Technol. A 13, 815 (1995).
11. Y. Jin, K. Saito, M. Shimada, and T. Ono, J. Vac. Sci. Technol. B 21, 942 (2003).
12. K. Saito, Y. Jin, and M. Shimada, J. Electrochem. Soc. 151, G327 (2004).
13. K. Saito, Y. Jin, T. Ono, and M. Shimada, Jpn. J. Appl. Phys., Part 2 43, L765 (2004).
14. Y. Fukuda, T. Ueno, S. Hirono, and S. Hashimoto, Jpn. J. Appl. Phys., Part 1 44, 6981 (2005).
15. Y. Fukuda, K. Kato, H. Toyota, T. Ono, Y. Nagasato, and T. Ueno, Jpn. J. Appl. Phys., Part 1 45, 7351 (2006).
16. T. Ono, C. Takahashi, and S. Matsuo, Jpn. J. Appl. Phys., Part 2 23, L534 (1984).
17. T. Amazawa, T. Ono, and M. Shimada, J. Vac. Sci. Technol. B 17, 2222 (1999).
18. Y. Jin, K. Saito, M. Shimada, and T. Ono, J. Vac. Sci. Technol. B 23, 1480 (2005).
19. T. Ono, K. Kato, H. Toyota, Y. Fukuda, and Y. Jin, Jpn. J. Appl. Phys., Part 1 45, 7345 (2006).
20. T. Ono, H. Nishimura, M. Shimada, and S. Matsuo, J. Vac. Sci. Technol. A 12, 1281 (1994).
21. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1981), Chap., p. 222.
22. Y. Fukuda, T. Ueno, and S. Hirono, Jpn. J. Appl. Phys., Part 1 44, 7928 (2005).
23. Y. Fukuda, Y. Otani, Y. Itayama, and T. Ono, IEEE Trans. Electron Devices (submitted).