Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Sugawara, Takuya ^a,b   Oshima, Yasuhiro ^b,c   Sreenivasan, Raghavasimhan ^b   McIntyre, Paul C ^b  

^a TOKYO ELECTRON LTD   (Japan)

^b Stanford University   (United States)

^c Tokyo Electron America Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BAND STRUCTURE; ELECTRIC PROPERTIES; GERMANIUM; GROWTH (MATERIALS); MOS CAPACITORS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM DIOXIDE; NEGATIVE FLATBAND VOLTAGE; TANTALUM-OXYNITRIDE (TAON) INTERFACES;

GATES (TRANSISTOR);

EID: 33947317756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472197     Document Type: Article

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