Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1399-1407

  Xie, Ruilong ^a,b   Phung, Thanh Hoa ^a   Yu, Mingbin ^c   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Bias temperature instability (BTI); Fluorine (F); Germanium (Ge); HfO2; High k gate dielectrics; Interface traps; Metal oxide semiconductor (MOS) devices; MOS fieldeffect transistor (MOSFET); Passivation; Silicon nitride (SN)

Indexed keywords

BIAS TEMPERATURE INSTABILITY; BIAS TEMPERATURE INSTABILITY (BTI); HIGH-K GATE DIELECTRICS; INTERFACE TRAPS; METAL OXIDE SEMICONDUCTOR; MOS FIELDEFFECT TRANSISTOR (MOSFET); MOS-FET;

DIELECTRIC DEVICES; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; MOS DEVICES; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 77952743820     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2046992     Document Type: Article

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