Evidence of low interface trap density in Ge O2 Ge metal-oxide- semiconductor structures fabricated by thermal oxidation

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Matsubara, Hiroshi ^a   Sasada, Takashi ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; ATMOSPHERIC TEMPERATURE; ATMOSPHERICS; CHEMICAL OXYGEN DEMAND; CLARIFICATION; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; HYDROGEN; METALS; MOS DEVICES; MOSFET DEVICES; NONMETALS; OPTICAL DESIGN; OXIDATION; PASSIVATION; SEMICONDUCTOR MATERIALS; SUBSTRATES;

AMERICAN INSTITUTE OF PHYSICS (AIP); CONDUCTANCE METHOD; DIRECT OXIDATION; HYDROGEN ANNEALING; INTERFACE STATES; INTERFACE TRAP DENSITY (NIT); LOW TEMPERATURE (LTR); MAXIMUM TEMPERATURE; METAL OXIDE SEMICONDUCTOR (MOS) STRUCTURES; METAL-OXIDE SEMICONDUCTOR (MOS); MINIMUM VALUES; OXIDATION TEMPERATURES;

GERMANIUM;

EID: 48249136210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959731     Document Type: Article

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