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Volumn 105, Issue 12, 2009, Pages

On the extraction of interface trap density in the Pt/La2O 3/Ge gate stack and the determination of the charge neutrality level in Ge

(2) Bozyigit, D a Rossel, C a

a IBM RESEARCH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE SUBSTRATES; BAND GAPS; CHARGE NEUTRALITY LEVEL; CONDUCTANCE METHOD; ELECTRICAL PERFORMANCE; ELECTRON AND HOLE TRAPS; GATE STACKS; INTERFACE TRAP DENSITY; MINORITY CARRIER; REVERSE BIAS; SEMICONDUCTOR INTERFACES; SOURCE AND DRAINS; TRAP DENSITY;

FIELD EFFECT TRANSISTORS; GERMANIUM; METAL RECOVERY;

SUBSTRATES;

EID: 67650215304 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3155830 Document Type: Conference Paper

Times cited : (3)

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