Higher gate capacitance Ge n-MOSFETs using laser annealing

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 449-451

  Chen, W B ^a   Shie, B S ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Annealing; gate dielectric; Ge; high ; laser

Indexed keywords

EQUIVALENT OXIDE THICKNESS; GATE CAPACITANCE; GATE LEAKAGES; GE; HIGH-FIELD; IDEALITY FACTORS; LASER ANNEALING; MOSFETS; NMOSFETS; SUBTHRESHOLD SWING;

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); GERMANIUM; MOSFET DEVICES; SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 79953041710     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2106478     Document Type: Article

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