Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3741-3743

  Wu, Nan ^a   Zhang, Qingchun ^a   Zhu, Chunxiang ^a   Yeo, Chia Chin ^a   Whang, S J ^a   Chan, D S H ^a   Li, M F ^a   Cho, Byung Jin ^a   Chin, Albert ^b   Kwong, Dim Lee ^c   Du, A Y ^d   Tung, C H ^d   Balasubramanian, N ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c The University of Texas at Austin   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESS (EOT); POSTDEPOSITION ANNEAL (PDA); ROOM TEMPERATURE;

AMMONIA; ANNEALING; CAPACITORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; TANTALUM COMPOUNDS;

HAFNIUM COMPOUNDS;

EID: 2942581439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737057     Document Type: Article

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