Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1441-1447

  Chen, James Jer Hueih ^a   Bojarczuk Jr , Nestor A ^b   Shang, Huiling ^b   Copel, Matthew ^b   Hannon, James B ^b   Karasinski, Joseph ^b   Preisler, Edward ^b   Banerjee, Sanjay K ^a   Guha, Supratik ^b  

^a The University of Texas at Austin   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEPOSITION; GATE DIELECTRICS; HAFNIUM DIOXIDE; METAL GATED DIELECTRIC CAPACITORS; POST DEPOSITION ANNEALS; SURFACE NITRIDATION; ULTRAHIGH VACUUM REACTIVE ATOMIC BEAM DEPOSITION; ULTRAVIOLET OZONE OXIDATION;

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITRIDING; OXIDATION; SEMICONDUCTING GERMANIUM; SURFACE TREATMENT; ULTRATHIN FILMS;

CAPACITORS;

EID: 4444296234     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833593     Document Type: Article

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