Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatment

Journal of the Electrochemical Society

Volumn 154, Issue 7, 2007, Pages

  Cheng, Chao Ching ^a   Chien, Chao Hsin ^a,b   Luo, Guang Li ^b   Yang, Chun Hui ^b   Kuo, Mei Ling ^b   Lin, Je Hung ^a   Tseng, Chih Kuo ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITRIDATION; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; VAPORIZATION;

CONDUCTANCE LOSS; HIGH TEMPERATURE PROCESSING; MIDGAP TRAP STATES; PLASMA PRETREATMENT;

CAPACITORS;

EID: 34249905188     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2734875     Document Type: Article

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